page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ic = - 1a continuous collector current low saturation voltage vce(sat) < - 500mv @ - 0.5a epitaxial planar die construction complementary npn types: bcx54, 55, and 56 maxi mum ratings ( t a =25 unless otherwise noted) charac t eristic s y mb ol bcx51 bcx52 bcx53 unit collector - base voltage v cbo - 45 - 60 - 100 v collector - emitter voltage v ceo - 45 - 60 - 80 v emitter - base voltage v ebo - 5 v continuous collector cu r rent i c - 1 a peak pulse coll e ctor cu r rent i cm - 1.5 continuous base curr e nt i b - 100 ma peak pulse base curr e nt i bm - 200 power dissipation (note 1) pd 1 w operating and storage temperature range tj, tstg - 65 to +150 c electrical characteristics ( @ ta=25 unless otherwise specified ) charac t eristic s y mb ol min t y p max unit test c o n dit i on collector - base breakd o w n volt a ge bcx51 bv cbo - 45 - - v i c = - 100a bcx52 - 60 bcx53 - 100 collector - emitter breakd o w n volt a ge (note 2) bcx51 bv ceo - 45 - - v i c = - 10ma bcx52 - 60 bcx53 - 80 emitter - base br e akdown voltage bv ebo - 5 - - v i e = - 10a collector cut - off curr e nt i cbo - - - 0.1 - 20 a v cb = - 30v v cb = - 30v, t a = 150c emitter cut - off c urrent i ebo - - - 20 na v eb = - 4v static fo r w ard c urrent transf e r r atio (note 2 ) all ver s ions h fe 25 40 25 - - - - 250 - i c = - 5ma, v ce = - 2v i c = - 150ma, v c e = - 2v i c = - 500ma, v c e = - 2v 10 gain grp 63 - 160 i c = - 150ma, v c e = - 2v 16 gain grp 100 - 250 i c = - 150ma, v c e = - 2v collector - emitter saturation volt a ge (note 2) v ce(sat) - - - 0.5 v i c = - 500ma, i b = - 50ma base - emitter t ur n - on v oltage ( n ote 2) v be(on) - - - 1.0 v i c = - 500ma, v c e = - 2v transition fr e q u en c y f t 150 - - mhz i c = - 50ma, v ce = - 10v f = 100mhz output capacit a nce c obo - - 25 pf v cb = - 10v, f = 1mhz produ c t bcx51 bcx51 - 10 bcx51 - 16 bcx52 bcx52 - 10 bcx52 - 16 bcx53 bcx53 - 10 bcx53 - 16 marking aa a c ad ae ag am ah ak al b cx51/52/53 ( pn p ) 1. base 2. collecto sot - 89 3. emitter notes: 2. measured under pulsed conditions. pulse width 300s. duty cycle 2%. notes: 1. for a device surface mounted on 25 mm x 25mm fr4 pcb with high coverage of single sided 1 oz copper, in still air cond itions; the device is measured when operating in a steady-state condition.
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. b cx51/52/53 typical cha racteristics 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 -i , collector current(a) c -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) fig 3 typical base-emitter turn-on voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a v = -2v ce 0 0.1 0.2 0.3 0.4 0.5 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) fig. 5 typical base-emitter saturation voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a i / i = 10 cb 0 50 100 150 200 250 300 020406080100 -i , collector current (ma) c f, g ain-bandwid t h p r o d u c t (m h z) t fig. 6 typical gain-bandwidth product vs. collector current v = -5v ce f = 100mhz 0 20 40 60 80 100 120 140 160 010 203040 v , reverse voltage (v) r capacitance(pf) fig. 7 typical capacitance characteristics c obo c ibo f = 1mhz
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